STW58N65DM2AG is available for purchase but is not normally stocked.
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N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW58N65DM2AG

DigiKey Part Number
497-16137-5-ND
Manufacturer
Manufacturer Product Number
STW58N65DM2AG
Description
MOSFET N-CH 650V 48A TO247
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
EDA/CAD Models
STW58N65DM2AG Models
Product Attributes
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Category
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Mfr
Vgs (Max)
±25V
Series
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 100 V
Packaging
Tube
Power Dissipation (Max)
360W (Tc)
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
Grade
Automotive
Technology
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
65mOhm @ 24A, 10V
Base Product Number
Vgs(th) (Max) @ Id
5V @ 250µA
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (9)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IXFH60N65X2IXYS0238-IXFH60N65X2-ND$105.49000Similar
IXTH48N65X2IXYS0IXTH48N65X2-ND$82.65000Similar
IXTH52N65XIXYS0IXTH52N65X-ND$72.16467Similar
IXTH62N65X2IXYS0IXTH62N65X2-ND$66.65000Similar
SIHW47N60EF-GE3Vishay Siliconix0SIHW47N60EF-GE3-ND$86.56000Similar
Available To Order
Check Lead Time
cms-non-stock-description
All prices are in HKD
Tube
QuantityUnit PriceExt Price
600$48.71237$29,227.42
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.