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IXTH62N65X2 is out of stock and can be placed on backorder.
Available Substitutes:
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Category | Vgs(th) (Max) @ Id 4.5V @ 4mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V |
Series | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 5940 pF @ 25 V |
Part Status Active | Power Dissipation (Max) 780W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package TO-247 (IXTH) |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 52mOhm @ 31A, 10V |
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Substitutes (2)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPW60R060P7XKSA1 | Infineon Technologies | 0 | IPW60R060P7XKSA1-ND | $56.62000 | Similar |
| SIHG47N60E-E3 | Vishay Siliconix | 0 | SIHG47N60E-E3-ND | $85.26000 | Similar |
In-Stock: 0
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Quantity
All prices are in HKD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $66.65000 | $66.65 |
| 30 | $55.04800 | $1,651.44 |
| 120 | $53.30558 | $6,396.67 |
| 510 | $51.01814 | $26,019.25 |
