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N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions

SCT3120ALGC11

DigiKey Part Number
SCT3120ALGC11-ND
Manufacturer
Manufacturer Product Number
SCT3120ALGC11
Description
SICFET N-CH 650V 21A TO247N
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N
Datasheet
 Datasheet
EDA/CAD Models
SCT3120ALGC11 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.6V @ 3.33mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 18 V
Packaging
Tube
Vgs (Max)
+22V, -4V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 500 V
FET Type
Power Dissipation (Max)
103W (Tc)
Technology
Operating Temperature
175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247N
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Rds On (Max) @ Id, Vgs
156mOhm @ 6.7A, 18V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (20)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IXKH20N60C5IXYS0IXKH20N60C5-ND$0.00000Upgrade
FCH190N65F-F155onsemi0FCH190N65F-F155-ND$58.74000Similar
IPW60R199CPFKSA1Infineon Technologies0IPW60R199CPFKSA1-ND$16.53250Similar
IXFH18N65X2IXYS0238-IXFH18N65X2-ND$27.79140Similar
IXFH22N65X2IXYS0238-IXFH22N65X2-ND$56.29000Similar
In-Stock: 0
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All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$79.30000$79.30
30$42.62800$1,278.84
120$40.75308$4,890.37
510$37.32514$19,035.82
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.