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IXFH22N65X2 is out of stock and can be placed on backorder.
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Category | Vgs(th) (Max) @ Id 5.5V @ 1.5mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V |
Series | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 25 V |
Part Status Active | Power Dissipation (Max) 390W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package TO-247 (IXTH) |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 160mOhm @ 11A, 10V |
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Substitutes (24)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPW60R199CPFKSA1 | Infineon Technologies | 0 | IPW60R199CPFKSA1-ND | $16.53250 | Similar |
| SCT3120ALGC11 | Rohm Semiconductor | 0 | SCT3120ALGC11-ND | $79.30000 | Similar |
| SIHG21N60EF-GE3 | Vishay Siliconix | 0 | SIHG21N60EF-GE3-ND | $43.73000 | Similar |
| SIHG21N65EF-GE3 | Vishay Siliconix | 0 | SIHG21N65EF-GE3-ND | $20.26686 | Similar |
| SIHG22N60AE-GE3 | Vishay Siliconix | 0 | SIHG22N60AE-GE3-ND | $40.30000 | Similar |
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Quantity
All prices are in HKD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $56.29000 | $56.29 |
| 30 | $31.37200 | $941.16 |
| 120 | $29.37533 | $3,525.04 |
| 510 | $26.72308 | $13,628.77 |
