Name: SIJ186DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ186DP-T1-GE3TR-ND
Price: 13.71 HKD
Availability: OutOfStock

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SIJ186DP-T1-GE3
DigiKey Part Number	SIJ186DP-T1-GE3TR-ND - Tape & Reel (TR) SIJ186DP-T1-GE3CT-ND - Cut Tape (CT) SIJ186DP-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIJ186DP-T1-GE3
Description	MOSFET N-CH 60V 23A/79.4A PPAK
Manufacturer Standard Lead Time	52 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SIJ186DP-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.6V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 30 V
Part Status Active	Power Dissipation (Max) 5W (Ta), 57W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 79.4A (Tc)	Package / Case PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Base Product Number SIJ186
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V