IRFBE30PBF is out of stock and can be placed on backorder.
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N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFBE30PBF

DigiKey Part Number
IRFBE30PBF-ND
Manufacturer
Manufacturer Product Number
IRFBE30PBF
Description
MOSFET N-CH 800V 4.1A TO220AB
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFBE30PBF Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Type
Power Dissipation (Max)
125W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
800 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IRFBE30PBF-BE3Vishay Siliconix0742-IRFBE30PBF-BE3-ND$28.07000Direct
FQP3N60Consemi0FQP3N60CFS-ND$13.22000Similar
FQP4N80onsemi0FQP4N80FS-ND$7.47653Similar
IXTP4N80PIXYS0IXTP4N80P-ND$18.36000Similar
STP3N80K5STMicroelectronics841497-14281-5-ND$17.05000Similar
In-Stock: 0
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All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$32.96000$32.96
50$16.81800$840.90
100$15.25150$1,525.15
500$12.50616$6,253.08
1,000$11.62431$11,624.31
2,000$11.21794$22,435.88
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.