FCH067N65S3-F155 is out of stock and can be placed on backorder.
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N-Channel 650 V 44A (Tc) 312W (Tc) Through Hole TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FCH067N65S3-F155

DigiKey Part Number
FCH067N65S3-F155OS-ND
Manufacturer
Manufacturer Product Number
FCH067N65S3-F155
Description
MOSFET N-CH 650V 44A TO247
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 44A (Tc) 312W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
EDA/CAD Models
FCH067N65S3-F155 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4.5V @ 4.4mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 400 V
Part Status
Active
Power Dissipation (Max)
312W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-247-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
67mOhm @ 22A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (5)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IXTH52N65XIXYS0IXTH52N65X-ND$72.16467Similar
R6076MNZ1C9Rohm Semiconductor0R6076MNZ1C9-ND$0.00000Similar
TSM60NE048PW C0GTaiwan Semiconductor Corporation01801-TSM60NE048PWC0G-ND$119.69000Similar
TSM60NE069PW C0GTaiwan Semiconductor Corporation01801-TSM60NE069PWC0G-ND$93.50000Similar
TSM60NE084PW C0GTaiwan Semiconductor Corporation01801-TSM60NE084PWC0G-ND$82.48000Similar
In-Stock: 0
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All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$46.99000$46.99
30$35.99267$1,079.78
120$31.90108$3,828.13
510$29.43363$15,011.15
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.