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IXTA12N65X2 is available for purchase but is not normally stocked.
Available Substitutes:
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Product Attributes
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Category | Vgs(th) (Max) @ Id 5V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V |
Series | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V |
Part Status Active | Power Dissipation (Max) 180W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Surface Mount |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package TO-263AA |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V |
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Substitutes (5)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPB65R310CFDAATMA1 | Infineon Technologies | 0 | 448-IPB65R310CFDAATMA1CT-ND | $23.41000 | Similar |
| R6011ENJTL | Rohm Semiconductor | 0 | R6011ENJTLCT-ND | $38.51000 | Similar |
| R6011KNJTL | Rohm Semiconductor | 0 | R6011KNJTLCT-ND | $25.13000 | Similar |
| R6015FNJTL | Rohm Semiconductor | 0 | 846-R6015FNJTLTR-ND | $14.56439 | Similar |
| SIHB12N60E-GE3 | Vishay Siliconix | 0 | SIHB12N60E-GE3-ND | $22.93000 | Similar |
Manufacturer Quote Required
This product requires a manufacturer-approved quote before it can be ordered. Orders must meet the manufacturer’s standard package quantity, may be subject to extended lead times, and cannot be canceled or returned. Quotes are typically processed within 3–5 business days after submission.
