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N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SPP20N60CFDXKSA1

DigiKey Part Number
448-SPP20N60CFDXKSA1-ND
Manufacturer
Manufacturer Product Number
SPP20N60CFDXKSA1
Description
MOSFET N-CH 650V 20.7A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
EDA/CAD Models
SPP20N60CFDXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
5V @ 1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
124 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 25 V
Part Status
Not For New Designs
Power Dissipation (Max)
208W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
220mOhm @ 13.1A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (6)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IRF830AVishay Siliconix0IRF830A-ND$0.00000Similar
IRF830APBFVishay Siliconix0IRF830APBF-ND$23.66000Similar
IRFBC30APBFVishay Siliconix0IRFBC30APBF-ND$30.51000Similar
SIHP15N65E-GE3Vishay Siliconix0SIHP15N65E-GE3-ND$12.62503Similar
SIHP22N65E-GE3Vishay Siliconix0SIHP22N65E-GE3-ND$16.92889Similar
Available To Order
cms-non-stock-description
Not recommended for new design, minimums may apply View Substitutes
All prices are in HKD
Tube
QuantityUnit PriceExt Price
500$15.69614$7,848.07
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.