SPA11N80C3XKSA2 is out of stock and can be placed on backorder.
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IXYS
In Stock: 12
Unit Price: $35.65000
Datasheet

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Toshiba Semiconductor and Storage
In Stock: 0
Unit Price: $42.59000
Datasheet
N-Channel 800 V 11A (Tc) 34W (Tc) Through Hole PG-TO220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SPA11N80C3XKSA2

DigiKey Part Number
448-SPA11N80C3XKSA2-ND
Manufacturer
Manufacturer Product Number
SPA11N80C3XKSA2
Description
MOSFET N-CH 800V 11A TO220-3
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 11A (Tc) 34W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.9V @ 680µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
34W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
800 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IXTP8N70X2MIXYS12IXTP8N70X2M-ND$35.65000Similar
TK12E80W,S1XToshiba Semiconductor and Storage0TK12E80WS1X-ND$42.59000Similar
In-Stock: 0
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All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$25.78000$25.78
50$12.87900$643.95
100$11.63080$1,163.08
500$9.44282$4,721.41
1,000$8.73987$8,739.87
2,000$8.34513$16,690.26
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.