Name: IRFP4227PBFXKMA1
Brand: Infineon Technologies
SKU: 448-IRFP4227PBFXKMA1-ND
Price: 36.96 HKD
Availability: OutOfStock

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IRFP4227PBFXKMA1
DigiKey Part Number	448-IRFP4227PBFXKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRFP4227PBFXKMA1
Description	TRENCH >=200V
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole PG-TO247-3-901
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 25mOhm @ 46A, 10V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5V @ 250µA
Series HEXFET®	Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Packaging Tube	Vgs (Max) ±30V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 330W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -40°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 65A (Tc)	Supplier Device Package PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-247-3