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N-Channel 650 V 60A (Tc) 431W (Tc) Through Hole PG-TO247-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPW60R045CPFKSA1

DigiKey Part Number
448-IPW60R045CPFKSA1-ND
Manufacturer
Manufacturer Product Number
IPW60R045CPFKSA1
Description
MOSFET N-CH 650V 60A TO247-3
Customer Reference
Detailed Description
N-Channel 650 V 60A (Tc) 431W (Tc) Through Hole PG-TO247-3-1
Datasheet
 Datasheet
EDA/CAD Models
IPW60R045CPFKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 3mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
431W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
45mOhm @ 44A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (9)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STW65N65DM2AGSTMicroelectronics0497-16127-5-ND$86.32000Direct
FCH040N65S3-F155onsemi0FCH040N65S3-F155-ND$115.69000Similar
FCH041N65F-F085onsemi0FCH041N65F-F085-ND$81.67000Similar
IXFH80N65X2IXYS0238-IXFH80N65X2-ND$127.93000Similar
SIHW70N60EF-GE3Vishay Siliconix0SIHW70N60EF-GE3-ND$70.27885Similar
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Tube
QuantityUnit PriceExt Price
1$119.93000$119.93
30$73.23067$2,196.92
120$67.96442$8,155.73
510$67.51159$34,430.91
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.