IPP60R385CPXKSA1 is available for purchase but is not normally stocked.
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STMicroelectronics
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Unit Price: $20.31000
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N-Channel 650 V 9A (Tc) 83W (Tc) Through Hole PG-TO220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP60R385CPXKSA1

DigiKey Part Number
448-IPP60R385CPXKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R385CPXKSA1
Description
MOSFET N-CH 650V 9A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 9A (Tc) 83W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R385CPXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 340µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
83W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
385mOhm @ 5.2A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (11)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STP10NK80ZSTMicroelectronics0497-7498-5-ND$20.31000Direct
IRF830AVishay Siliconix0IRF830A-ND$0.00000Similar
IRF830APBFVishay Siliconix0IRF830APBF-ND$23.66000Similar
IRFBC30APBFVishay Siliconix0IRFBC30APBF-ND$30.51000Similar
IXTP12N65X2IXYS0IXTP12N65X2-ND$16.24930Similar
Available To Order
cms-non-stock-description
Not recommended for new design, minimums may apply View Substitutes
All prices are in HKD
Tube
QuantityUnit PriceExt Price
500$7.98130$3,990.65
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.