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N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP60R125CPXKSA1

DigiKey Part Number
IPP60R125CPXKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R125CPXKSA1
Description
MOSFET N-CH 650V 25A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R125CPXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 1.1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
208W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
125mOhm @ 16A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
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SIHP30N60E-E3Vishay Siliconix0742-SIHP30N60E-E3-ND$21.92597Similar
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Tube
QuantityUnit PriceExt Price
1$48.46000$48.46
50$25.57040$1,278.52
100$23.36020$2,336.02
500$19.49082$9,745.41
1,000$18.81448$18,814.48
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.