IPP120N08S403AKSA1 is out of stock and can be placed on backorder.
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onsemi
In Stock: 0
Unit Price: $51.48000
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Toshiba Semiconductor and Storage
In Stock: 0
Unit Price: $41.61000
Datasheet
N-Channel 80 V 120A (Tc) 278W (Tc) Through Hole PG-TO220-3-1
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IPP120N08S403AKSA1

DigiKey Part Number
448-IPP120N08S403AKSA1-ND
Manufacturer
Manufacturer Product Number
IPP120N08S403AKSA1
Description
MOSFET N-CH 80V 120A TO220-3
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
N-Channel 80 V 120A (Tc) 278W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
EDA/CAD Models
IPP120N08S403AKSA1 Models
Product Attributes
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Category
Gate Charge (Qg) (Max) @ Vgs
167 nC @ 10 V
Mfr
Vgs (Max)
±20V
Series
Input Capacitance (Ciss) (Max) @ Vds
11550 pF @ 25 V
Packaging
Tube
Power Dissipation (Max)
278W (Tc)
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
Grade
Automotive
Technology
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
80 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
2.8mOhm @ 100A, 10V
Base Product Number
Vgs(th) (Max) @ Id
4V @ 223µA
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FDP036N10Aonsemi0FDP036N10A-ND$51.48000Similar
TK100E08N1,S1XToshiba Semiconductor and Storage0TK100E08N1S1X-ND$41.61000Similar
In-Stock: 0
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All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$37.37000$37.37
50$23.21740$1,160.87
100$22.96780$2,296.78
500$22.29800$11,149.00
1,000$21.97182$21,971.82
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.